2N4400 / mmbt4400 discrete power & signal technologies npn general purpose amplifier this device is designed for use as general purpose amplifiers and switches requiring collector currents to 500 ma. sourced from process 19. see pn2222a for characteristics. absolute maximum ratings* ta = 25c unless otherwise noted * these ratings are limiting values above which the serviceability of any semiconductor device may be impaired. notes : 1) these ratings are based on a maximum junction temperature of 150 degrees c. 2) these are steady state limits. the factory should be consulted on applications involving pulsed or low duty cycle operations. thermal characteristics ta = 25c unless otherwise noted symbol parameter value units v ceo collector-emitter voltage 40 v v cbo collector-bas e voltage 60 v v ebo emitter-base voltage 6.0 v i c collector current - continuous 1.0 a t j , t stg operating and storage j unction temperature range -55 to +150 c symbol characteristic max units 2N4400 *mmbt4400 p d total device dissipation derate above 25 c 625 5.0 350 2.8 mw mw/ c r q jc thermal resistanc e, j unction to case 83.3 c/w r q ja thermal resistanc e, j unction to ambient 200 357 c/w c b e sot-23 mark: 83 mmbt4400 2N4400 c b e to-92 ? 1997 fairchild semiconductor corporation
2N4400 / mmbt4400 npn general purpose amplifier (continued) electrical characteristics ta = 25c unless otherwise noted off characteristics symbol parameter test conditions min max units v (br)ceo collector-emitter breakdown voltage* i c = 1.0 ma, i b = 0 40 v v (br)cbo collector-base breakdown voltage i c = 100 m a, i e = 0 60 v v (br) ebo emitter-base breakdown voltage i e = 100 m a, i c = 0 6.0 v i cex collector cutoff current v ce = 35 v, v eb = 0.4 v 0.1 m a i bl emitter cutoff current v ce = 35 v, v eb = 0.4 v 0.1 m a on characteristics* h fe dc current gain v ce = 1.0 v, i c = 1.0 ma v ce = 1.0 v, i c = 10 ma v ce = 1.0 v, i c = 150 ma v ce = 2.0 v, i c = 500 ma 20 40 50 20 150 v ce( sat ) collector-emitter saturation voltage i c = 150 ma, i b =15 ma i c = 500 ma, i b = 50 ma 0.40 0.75 v v v be( sat ) base-emitter saturation voltage i c = 150 ma, i b =15 ma i c = 500 ma, i b = 50 ma 0.75 0.95 1.2 v v small signal characteristics c ob output capacitance v cb = 5.0 v, f = 140 khz 6.5 pf c ib input capacitance v eb = 0.5 v, f = 140 khz 30 pf h fe small-signal current gain i c = 20 ma, v ce = 10 v, f = 100 mhz 2.0 h fe small-signal current gain v ce = 10 v, i c = 1.0 ma, 20 250 h ie input impedance f = 1.0 khz 0.5 7.5 k w h re voltage feedback ratio 0.1 8.0 x 10 -4 h oe output admittance 1.0 30 m mhos switching characteristics * pulse test: pulse width 300 m s, duty cycle 2.0% t d delay time v cc = 30 v, i c = 150 ma, 15 ns t r rise time i b1 = 15 ma ,v be ( off ) = 0.0 v 20 ns t s storage time v cc = 30 v, i c = 150 ma 225 ns t f fall time i b1 = i b2 = 15 ma 30 ns
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